The optical and electrical properties of copper indium di-selenide thin films
Identifieur interne : 012661 ( Main/Repository ); précédent : 012660; suivant : 012662The optical and electrical properties of copper indium di-selenide thin films
Auteurs : RBID : Pascal:00-0481626Descripteurs français
- Pascal (Inist)
- Spectrophotométrie, Spectre absorption, Conductivité électrique, Energie activation, Densité porteur charge, Effet Hall, Stoechiométrie, Etat défaut, Dépendance température, Matériau semiconducteur, Indium séléniure, Cuivre séléniure, Couche mince, Etude expérimentale, Composé ternaire, 7361L, 7866L, CuInSe2, Cu In Se.
English descriptors
- KwdEn :
Abstract
Thin films of copper indium di-selenide (CIS) with a wide range of compositions near stoichiometry have been formed on glass substrates in vacuum by the stacked elemental layer (SEL) deposition technique. The compositional and optical properties of the films have been measured by proton-induced X-ray emission (PIXE) and spectrophotometry (photon wavelength range of 300-2500 nm), respectively. Electrical conductivity (σ), charge-carrier concentration (n), and Hall mobility (μH) were measured at temperatures ranging from 143 to 400 K. It was found that more indium-rich films have higher energy gaps than less indium-rich ones while more Cu-rich films have lower energy gaps than less Cu-rich films. The sub-bandgap absorption of photons is minimum in the samples having Cu/In 1 and it again decreases, as Cu/In ratio becomes less than 0.60. Indium-rich films show n-type conductivities while near-stoichiometric and copper-rich films have p-type conductivities. At 300 K a, n and μH of the films vary from 2.15 × 10-3 to 1.60 × 10-1 (Ω cm)-1, 2.28 × 1015 to 5.74 × 1017 cm-3 and 1.74 to 5.88 cm2 (V s)-1, respectively, and are dependent on the composition of the films. All the films were found to be non-degenerate. The ionization energies for acceptors and donors vary between 12 and 24, and 3 and 8 meV, respectively, and they are correlated well with the Cu/In ratios. The crystallites of the films were found to be partially depleted in charge carriers.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The optical and electrical properties of copper indium di-selenide thin films</title><author><name sortKey="Hasan, S M F" uniqKey="Hasan S">S. M. F. Hasan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Atomic Energy Center, P.O. Box 164</s1><s2>Dhaka</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Bangladesh</country><wicri:noRegion>Dhaka</wicri:noRegion></affiliation></author><author><name sortKey="Subhan, M A" uniqKey="Subhan M">M. A. Subhan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Atomic Energy Center, P.O. Box 164</s1><s2>Dhaka</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Bangladesh</country><wicri:noRegion>Dhaka</wicri:noRegion></affiliation></author><author><name sortKey="Mannan, K M" uniqKey="Mannan K">K. M. Mannan</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, University of Dhaka</s1><s2>Dhaka</s2><s3>BGD</s3><sZ>3 aut.</sZ></inist:fA14><country>Bangladesh</country><wicri:noRegion>Dhaka</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0481626</idno><date when="2000">2000</date><idno type="stanalyst">PASCAL 00-0481626 INIST</idno><idno type="RBID">Pascal:00-0481626</idno><idno type="wicri:Area/Main/Corpus">012346</idno><idno type="wicri:Area/Main/Repository">012661</idno></publicationStmt><seriesStmt><idno type="ISSN">0925-3467</idno><title level="j" type="abbreviated">Opt. mater. : (Amst.)</title><title level="j" type="main">Optical materials : (Amsterdam)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Activation energy</term><term>Carrier density</term><term>Copper selenides</term><term>Defect states</term><term>Electrical conductivity</term><term>Experimental study</term><term>Hall effect</term><term>Indium selenides</term><term>Semiconductor materials</term><term>Spectrophotometry</term><term>Stoichiometry</term><term>Temperature dependence</term><term>Ternary compounds</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Spectrophotométrie</term><term>Spectre absorption</term><term>Conductivité électrique</term><term>Energie activation</term><term>Densité porteur charge</term><term>Effet Hall</term><term>Stoechiométrie</term><term>Etat défaut</term><term>Dépendance température</term><term>Matériau semiconducteur</term><term>Indium séléniure</term><term>Cuivre séléniure</term><term>Couche mince</term><term>Etude expérimentale</term><term>Composé ternaire</term><term>7361L</term><term>7866L</term><term>CuInSe2</term><term>Cu In Se</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thin films of copper indium di-selenide (CIS) with a wide range of compositions near stoichiometry have been formed on glass substrates in vacuum by the stacked elemental layer (SEL) deposition technique. The compositional and optical properties of the films have been measured by proton-induced X-ray emission (PIXE) and spectrophotometry (photon wavelength range of 300-2500 nm), respectively. Electrical conductivity (σ), charge-carrier concentration (n), and Hall mobility (μ<sub>H</sub>) were measured at temperatures ranging from 143 to 400 K. It was found that more indium-rich films have higher energy gaps than less indium-rich ones while more Cu-rich films have lower energy gaps than less Cu-rich films. The sub-bandgap absorption of photons is minimum in the samples having Cu/In 1 and it again decreases, as Cu/In ratio becomes less than 0.60. Indium-rich films show n-type conductivities while near-stoichiometric and copper-rich films have p-type conductivities. At 300 K a, n and μ<sub>H</sub> of the films vary from 2.15 × 10<sup>-3</sup> to 1.60 × 10<sup>-1</sup> (Ω cm)<sup>-1</sup>, 2.28 × 10<sup>15</sup> to 5.74 × 10<sup>17</sup> cm<sup>-3</sup> and 1.74 to 5.88 cm<sup>2</sup> (V s)<sup>-1</sup>, respectively, and are dependent on the composition of the films. All the films were found to be non-degenerate. The ionization energies for acceptors and donors vary between 12 and 24, and 3 and 8 meV, respectively, and they are correlated well with the Cu/In ratios. The crystallites of the films were found to be partially depleted in charge carriers.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-3467</s0></fA01><fA03 i2="1"><s0>Opt. mater. : (Amst.)</s0></fA03><fA05><s2>14</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The optical and electrical properties of copper indium di-selenide thin films</s1></fA08><fA11 i1="01" i2="1"><s1>HASAN (S. M. F.)</s1></fA11><fA11 i1="02" i2="1"><s1>SUBHAN (M. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>MANNAN (K. M.)</s1></fA11><fA14 i1="01"><s1>Atomic Energy Center, P.O. Box 164</s1><s2>Dhaka</s2><s3>BGD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, University of Dhaka</s1><s2>Dhaka</s2><s3>BGD</s3><sZ>3 aut.</sZ></fA14><fA20><s1>329-336</s1></fA20><fA21><s1>2000</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22598</s2><s5>354000088986040080</s5></fA43><fA44><s0>0000</s0><s1>© 2000 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>00-0481626</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Optical materials : (Amsterdam)</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Thin films of copper indium di-selenide (CIS) with a wide range of compositions near stoichiometry have been formed on glass substrates in vacuum by the stacked elemental layer (SEL) deposition technique. The compositional and optical properties of the films have been measured by proton-induced X-ray emission (PIXE) and spectrophotometry (photon wavelength range of 300-2500 nm), respectively. Electrical conductivity (σ), charge-carrier concentration (n), and Hall mobility (μ<sub>H</sub>) were measured at temperatures ranging from 143 to 400 K. It was found that more indium-rich films have higher energy gaps than less indium-rich ones while more Cu-rich films have lower energy gaps than less Cu-rich films. The sub-bandgap absorption of photons is minimum in the samples having Cu/In 1 and it again decreases, as Cu/In ratio becomes less than 0.60. Indium-rich films show n-type conductivities while near-stoichiometric and copper-rich films have p-type conductivities. At 300 K a, n and μ<sub>H</sub> of the films vary from 2.15 × 10<sup>-3</sup> to 1.60 × 10<sup>-1</sup> (Ω cm)<sup>-1</sup>, 2.28 × 10<sup>15</sup> to 5.74 × 10<sup>17</sup> cm<sup>-3</sup> and 1.74 to 5.88 cm<sup>2</sup> (V s)<sup>-1</sup>, respectively, and are dependent on the composition of the films. All the films were found to be non-degenerate. The ionization energies for acceptors and donors vary between 12 and 24, and 3 and 8 meV, respectively, and they are correlated well with the Cu/In ratios. The crystallites of the films were found to be partially depleted in charge carriers.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C61L</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Spectrophotométrie</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Spectrophotometry</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Energie activation</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Activation energy</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Densité porteur charge</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Carrier density</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Effet Hall</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Hall effect</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Stoechiométrie</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Stoichiometry</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etat défaut</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Defect states</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Dépendance température</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Matériau semiconducteur</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium séléniure</s0><s2>NK</s2><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Cuivre séléniure</s0><s2>NK</s2><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Couche mince</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Thin films</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Experimental study</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>18</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>18</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>7361L</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>7866L</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Cu In Se</s0><s4>INC</s4><s5>93</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>16</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>16</s5></fC07><fC07 i1="02" i2="3" l="FRE"><s0>Métal transition composé</s0><s5>17</s5></fC07><fC07 i1="02" i2="3" l="ENG"><s0>Transition element compounds</s0><s5>17</s5></fC07><fN21><s1>318</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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